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Infineon Technologies Electronic Components Datasheet

SGD02N60 Datasheet

FAST IGBT IN NPT TECHNOLOGY

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SGD02N60 pdf
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SGP02N60,
SGB02N60
SGD02N60
Fast IGBT in NPT-technology
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-252-3-1 (D-PAK) P-TO-220-3-1
(TO-252AA)
(TO-220AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SGP02N60
SGB02N60
SGD02N60
VCE IC VCE(sat) Tj Package
Ordering Code
600V 2A
2.2V
150°C TO-220AB
Q67040-S4504
TO-263AB
Q67040-S4505
TO-252AA(DPAK) Q67041-A4707
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 2 A, VCC = 50 V, RGE = 25 ,
start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
600
6.0
2.9
12
12
±20
13
Unit
V
A
V
mJ
10
30
-55...+150
µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02


Infineon Technologies Electronic Components Datasheet

SGD02N60 Datasheet

FAST IGBT IN NPT TECHNOLOGY

No Preview Available !

SGD02N60 pdf
www.DataSheet4U.com
SGP02N60,
SGB02N60
SGD02N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
RthJC
RthJA
RthJA
Conditions
TO-220AB
TO-252AA
TO-263AB
Max. Value
4.2
62
50
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=2A
Tj=25°C
Tj=150°C
IC=150µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=2A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=2A
VGE=15V
TO-220AB
VGE=15V,tSC10µs
VCC 600V,
Tj 150°C
min.
600
1.7
-
3
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
1.9
2.2
4
-
-
-
1.6
142
18
10
14
7
20
Unit
max.
-V
2.4
2.7
5
µA
20
250
100 nA
-S
170 pF
22
12
18 nC
- nH
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2 Jul-02


Part Number SGD02N60
Description FAST IGBT IN NPT TECHNOLOGY
Maker Infineon Technologies
Total Page 12 Pages
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