SIGC109T120R3
SIGC109T120R3 is IGBT manufactured by Infineon.
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Preliminary
IGBT Chip
Features
:
- 1200V Trench + Field Stop technology
- low turn-off losses
- short tail current
- positive temperature coefficient
- easy paralleling
This chip is used for:
- power module
Applications:
- drives
Chip Type SIGC109T120R3
ICn
Die Size 10.47 x 10.44 mm2
Package sawn on foil
Ordering Code Q67050A4108-A001
1200V 100A
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Remended Storage Environment...
