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SIGC109T120R3L Datasheet, Infineon Technologies

SIGC109T120R3L igbt equivalent, igbt.

SIGC109T120R3L Avg. rating / M : 1.0 rating-15

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SIGC109T120R3L Datasheet

Features and benefits


* 1200V Trench + Field Stop technology
* 120µm chip
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy parallel.

Application


* drives G E Chip Type SIGC109T120R3L VCE ICn Die Size 10.47 x 10.44 mm2 Package sawn on foil Ordering Code.

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 M.

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