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SPD04P10PLG - Power-Transistor

Key Features

  • P-Channel.
  • Enhancement mode.
  • Logic level.
  • Avalanche rated.
  • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD04P10PL G -100 V 850 mΩ -4.2 A PG-TO-252-3 Type Package SPD04P10PL G PG-TO252-3 Marking 04P10PL Lead free Yes Packing Non dry Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD04P10PL G -100 V 850 mΩ -4.2 A PG-TO-252-3 Type Package SPD04P10PL G PG-TO252-3 Marking 04P10PL Lead free Yes Packing Non dry Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class I D T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS I D=-4.