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OptiMOS® Power-Transistor
Feature • N-Channel
• Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant
Type
Package
SPD30N03S2L-10G PG-TO252-3
Marking 2N03L10
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=30 A , VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt
IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR dv
SPD30N03S2L-10G Datasheet
