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SPI20N60CFD - Power Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPI20N60CFD Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.22 20.7 PG-TO262 V Ω A Type SPI20N60CFD Maximum Ratings Parameter Package PG-TO262 Pb-free Yes Marking 20N60CFD Symbol ID Value 20.7 13.1 52 690 1 20 40 ±20 ±30 208 -55... +150 Unit A Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax www.DataSheet4U.