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SPP08P06PH - Power-Transistor

Key Features

  • Product Summary.
  • P-Channel.
  • Enhancement mode.
  • Avalanche rated.
  • dv/dt rated Drain source voltage VDS -60 V Drain-source on-state resistance RDS(on) 0.3 W Continuous drain current ID -8.8 A.
  • 175°C operating temperature.
  • Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPP08P06P H Package PG-TO220-3 Pin 1 PIN 2/4 PIN 3 GDS Maximum Ratings,at Tj = 25 °C, unless otherwise specified P.

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SPP08P06P H SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V Drain-source on-state resistance RDS(on) 0.3 W Continuous drain current ID -8.8 A · 175°C operating temperature • Pb-free lead plating; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPP08P06P H Package PG-TO220-3 Pin 1 PIN 2/4 PIN 3 GDS Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current TC = 25 °C ID puls Avalanche energy, single pulse ID = -8.8 A , VDD = -25 V, RGS = 25 W EAS Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR dv/dt IS = -8.