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Infineon Technologies Electronic Components Datasheet

SPP24N60CFD Datasheet

Power Transistor

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SPP24N60CFD
CoolMOSTM Power Transistor
Features
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
Product Summary
V DS @ Tjmax
R DS(on),max
ID
• Extreme dv /dt rated
• High peak current capability
• Qualified for industrial grade applications according to JEDEC1)
650 V
0.185 "
21.7 A
PG-TO220
• CoolMOS CFD designed for
• Softswitching PWM Stages
• LCD & CRT TV
Type
SPP24N60CFD
Package
TPOG-2T2O0220
Marking
24N60CFD
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive2),3)
Avalanche current, repetitive2),3)
ID
I D,pulse
E AS
E AR
I AR
T C=25 °C
T C=100 °C
T C=25 °C
I D=10A, V DD=50 V
I D=20A, V DD=50 V
Drain source voltage slope
dv /dt
I D=21.7A, V DS=480V,
T j=125°C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
I S=21.7A, V DS=480 V,
T j=125°C
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M3 & M3.5 screws
Value
21.7
13.7
55
780
1
20
80
40
600
±20
±30
240
-55 ... 150
60
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Ncm
Rev. 1.3
page 1
2009-12-01


Infineon Technologies Electronic Components Datasheet

SPP24N60CFD Datasheet

Power Transistor

No Preview Available !

SPP24N60CFD
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
leaded
Soldering temperature, wave
soldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
Values
Unit
min. typ. max.
- - 0.52 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
V (BR)DS V GS=0 V, I D=21.7 A
600
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=1.2 mA
3
-
700
4
-V
-
5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=15.4 A,
T j=25 °C
V GS=10 V, I D=15.4 A,
T j=150 °C
R G f =1 MHz, open drain
g fs
|V DS|>2|I D|R DS(on)max,
I D=15.4 A
-
-
-
-
-
-
-
2.5 - µA
2600
-
- 100 nA
0.15 0.185 "
0.42 -
0.8 -
14.0 - S
Rev. 1.3
page 2
2009-12-01


Part Number SPP24N60CFD
Description Power Transistor
Maker Infineon Technologies
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SPP24N60CFD Datasheet PDF






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