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SPW47N65C3 - Power Transistor

Key Features

  • Worldwide best R ds,on in TO247.
  • Low gate charge.
  • Extreme dv/dt rated.
  • High peak current capability.
  • Qualified according to JEDEC1) for target.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CoolMOSTM Power Transistor Features • Worldwide best R ds,on in TO247 • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ SPW47N65C3 650 V 0.07 Ω 255 nC PG-TO247-3-1 Type SPW47N65C3 Package PG-TO247-3-1 Marking 47N65C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse ID I D,pulse E AS T C=25 °C T C=100 °C T C=25 °C I D=3.