11N60S5
11N60S5 is SPP11N60S5 manufactured by Infineon.
Feature
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- Ultra low effective capacitances
- Improved transconductance
SPP11N60S5 SPI11N60S5
VDS RDS(on)
600 V 0.38 Ω 11 A
PG-TO262
PG-TO220
P-TO220-3-1
23 1
Type SPP11N60S5 SPI11N60S5
Package PG-TO220 PG-TO262
Ordering Code Q67040-S4198 Q67040-S4338
Marking 11N60S5 11N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
ID = 5.5 A, VDD = 50 V
Avalanche energy, repetitive t AR limited by Tjmax1) EAR
ID = 11 A, VDD = 50 V
Avalanche current, repetitive t AR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
IAR VGS VGS Ptot Tj , Tstg
Value
11 7 22...
