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Infineon Technologies Electronic Components Datasheet

BSP76 Datasheet

Smart Lowside Power Switch

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BSP76 pdf
HITFETÒ II.Generation BSP 76
Smart Lowside Power Switch
Features
Product Summary
· Logic Level Input
Drain source voltage
· Input Protection (ESD)
On-state resistance
· Thermal shutdown with
auto restart
Nominal load current
Clamping energy
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
VDS
RDS(on)
ID(Nom)
EAS
4
42 V
200 mW
1.4 A
150 mJ
3
2
1 VPS05163
General Description
N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded
protection functions.
Vbb
HITFET â
In
Pin 1
Gate-Driving
Unit
Current
Limitation
Overvoltage-
Protection
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Drain
Pin 2 and 4 (TAB)
Source
Pin 3
M
Complete product spectrum and additional information http://www.infineon.com/hitfet
Page 1
2004-03-05


Infineon Technologies Electronic Components Datasheet

BSP76 Datasheet

Smart Lowside Power Switch

No Preview Available !

BSP76 pdf
BSP 76
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Drain source voltage
Supply voltage for full short circuit protection
Continuous input voltage1)
Continuous input current2)
-0.2V £ VIN £ 10V
VIN < -0.2V or VIN > 10V
VDS
Vbb(SC)
VIN
IIN
Operating temperature
Tj
Storage temperature
Power dissipation 5)
TC = 85 °C
Tstg
Ptot
Unclamped single pulse inductive energy 2)
Load dump protection VLoadDump2)3) = VA + VS
VIN = 0 and 10 V, td = 400 ms, RI = 2 W,
RL = 9 W, VA = 13.5 V
EAS
VLD
Electrostatic discharge voltage2) (Human Body Model) VESD
according to Jedec norm
EIA/JESD22-A114-B, Section 4
Jedec humidity category,J-STD-20-B
IEC climatic category; DIN EN 60068-1
Value
42
42
-0.22) ... +10
self limited
| IIN | £ 2
-40 ...+150
-55 ... +150
3.8
150
50
2
MSL1
40/150/56
Unit
V
mA
°C
W
mJ
V
kV
Thermal resistance
junction - ambient:
@ min. footprint
@ 6 cm2 cooling area 4)
junction-soldering point:
RthJA
RthJS
K/W
125
72
17 K/W
1For input voltages beyond these limits I IN has to be limited.
2not subject to production test, specified by design
3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
5not subject to production test, calculated by RthJA and Rds(on)
Page 2
2004-03-05


Part Number BSP76
Description Smart Lowside Power Switch
Maker Infineon Technologies AG
Total Page 10 Pages
PDF Download
BSP76 pdf
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