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Infineon Technologies Electronic Components Datasheet

BSS138N Datasheet

SIPMOS Small-Signal-Transistor

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SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
Product Summary
V DS
R DS(on),max
ID
BSS138N
60 V
3.5
0.23 A
SOT-23
Type
BSS138N
BSS138N
Package
SOT-23
SOT-23
Ordering Code
Q67042-S4184
Q67042-S4190
Tape and Reel Information
E6327: 3000 pcs/reel
E6433: 10000 pcs/reel
Marking
SKs
SKs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
dv /dt
I D=0.23 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=150 °C
V GS
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
0.23
0.18
0.92
6
±20
Class 1
0.36
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 2.1
page 1
2004-04-15


Infineon Technologies Electronic Components Datasheet

BSS138N Datasheet

SIPMOS Small-Signal-Transistor

No Preview Available !

Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Symbol Conditions
R thJA
BSS138N
min.
Values
typ.
Unit
max.
- - 350 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS= 0 V, I D=250 µA
60
-
-V
Gate threshold voltage
Drain-source leakage current
V GS(th) V GS=V DS, I D=26 µA 0.6 1.0 1.4
I D (off)
V DS=60 V,
V GS=0 V, T j=25 °C
-
- 0.1 µA
Gate-source leakage current
I GSS
V DS=60 V,
V GS=0 V, T j=150 °C
V GS=20 V, V DS=0 V
-
-
10 100
1 10 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=0.03 A
-
3.3 4.0
Transconductance
V GS=4.5 V, I D=0.19 A
-
3.5 6.0
V GS=10 V, I D=0.23 A
-
2.2 3.5
g fs
|V DS|>2|I D|R DS(on)max,
I D=0.18 A
0.1
0.2
-S
Rev. 2.1
page 2
2004-04-15


Part Number BSS138N
Description SIPMOS Small-Signal-Transistor
Maker Infineon Technologies AG
Total Page 9 Pages
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