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Infineon Technologies Electronic Components Datasheet

BSS83P Datasheet

SIPMOS Small-Signal-Transistor

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BSS83P pdf
Rev. 1.0
BSS 83 P
SIPMOS® Small-Signal-Transistor
Features
· P-Channel
· Enhancement mode
· Avalanche rated
· Logic Level
· dv/dt rated
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
VDS
RDS(on)
ID
-60
2
-0.33
3
V
W
A
Type
BSS 83 P
Package
SOT-23
Ordering Code
Q67041-S1416
Marking Pin 1
YAs G
2
1 VPS05161
PIN 2 PIN 3
SD
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA = 25 °C
TA = 70 °C
ID
Pulsed drain current
TA = 25 °C
Avalanche energy, single pulse
WID = -0.33 A , VDD = -25 V, RGS = 25
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID puls
EAS
EAR
dv/dt
IS = -0.33 A, VDS = -48 V, di/dt = 200 A/µs,
Tjmax = 150 °C
Gate source voltage
Power dissipation
TA = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Value
-0.33
-0.27
-1.32
9.5
0.036
6
±20
0.36
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-06-23


Infineon Technologies Electronic Components Datasheet

BSS83P Datasheet

SIPMOS Small-Signal-Transistor

No Preview Available !

BSS83P pdf
Rev. 1.0
BSS 83 P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
( Pin 3 )
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
Symbol
Values
Unit
min. typ. max.
RthJS
RthJA
- - 150 K/W
- - 350
- - 300
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = -250 µA
Gate threshold voltage, VGS = VDS
ID = -80 µA
Zero gate voltage drain current
VDS = -60 V, VGS = 0 V, Tj = 25 °C
VDS = -60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
VGS = -20 V, VDS = 0 V
Drain-source on-state resistance
VGS = -4.5 V, ID = -0.27 A
Drain-source on-state resistance
VGS = -10 V, ID = -0.33 A
V(BR)DSS -60
-
-
VGS(th) -1 -1.5 -2
IDSS
IGSS
- -0.1 -1
- -10 -100
- -10 -100
RDS(on)
-
2
3
RDS(on)
-
1.4
2
Unit
V
µA
nA
W
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-06-23


Part Number BSS83P
Description SIPMOS Small-Signal-Transistor
Maker Infineon Technologies AG
Total Page 9 Pages
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