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Infineon Technologies Electronic Components Datasheet

ESD5V3U4RRS Datasheet

Ultra-Low Capacitance ESD Diode Array

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Ultra-Low Capacitance ESD Diode Array
Rail-to-rail diodes with internal TVS diode
ESD / transient protection of four I/O lines
and one Vcc line exceeding:
IEC61000-4-2 (ESD): ± 15 kV (contact)
IEC61000-4-4 (EFT): 2.5 kV / 50 A (5/50 ns)
IEC61000-4-5 (surge): 3 A (8/20 µs)
Reverse working voltage data lines: 5.3 V max.
Reverse working voltage Vcc: 6 V max.
Very low capacitance: 0.4 pF typ.
Very low reverse current < 10 nA typ.
Very low clamping voltage:
12 V typ. at positive transients
4 V typ. at negative transients
Pb-free (RoHS compliant) package
Applications
USB 2.0 ports and future USB 3.0 ports
Ethernet port: 10/100/1000 Mb/s
IEEE 1394 FireWire ports
Mobile communications e.g. high-speed
SIM card protection
Consumer products (STB, DVD, DSC, DVC...)
Notebooks and desktop computers, peripherals
ESD5V3U4RRS
ESD5V3U4RRS
65
4
12 3
Type
ESD5V3U4RRS
Package
SOT363
Configuration
6 pins, uni-directional
Marking
E8s
1 2011-06-17


Infineon Technologies Electronic Components Datasheet

ESD5V3U4RRS Datasheet

Ultra-Low Capacitance ESD Diode Array

No Preview Available !

ESD5V3U4RRS
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
ESD contact discharge1)
Peak pulse current (tp = 8 / 20 µs)2)
Peak pulse power (tp = 8 / 20 µs)2)
VESD
Ipp
Ppk
Operating temperature range
Top
Storage temperature
Tstg
Value
15
3
50
-55...125
-65...150
Unit
kV
A
W
°C
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics 3)
Reverse working voltage
I/O pin4) to pin 5
VRWM
V
- - 5.3
pin 2 to pin 5
- -6
Breakdown voltage
I(BR) = 1 mA, any pin to pin 5
V(BR)
6.3 -
Reverse current
VR = 5.3 V, any pin to pin 5
IR - < 10
Clamping voltage
IPP = 1 A, tp = 8/20 µs2), any pin to pin 5
IPP = 3 A, tp = 8/20 µs2), any pin to pin 5
VCL
- 10
- 12
Forward clamping voltage
IPP = 1 A, tp = 8/20 µs2), any pin to pin 5
IPP = 3 A, tp = 8/20 µs2), any pin to pin 5
VFC
-2
-4
Line capacitance5)4)
CT - 0.4
VR = 0 V, f = 1 MHz, any I/O pin to pin 5
Dynamic resistance6)
RD - -
1VESD according to IEC61000-4-2
2Ipp according to IEC61000-4-5
3It is strongly recommended that pin 5 is connected to ground for propper functionality.
4I/0 pins are pin 1, 3, 4, 6
5Total capacitance line to ground
6 according to TLP tests
-
100 nA
V
13
15
4
6
0.6 pF
--
2 2011-06-17


Part Number ESD5V3U4RRS
Description Ultra-Low Capacitance ESD Diode Array
Maker Infineon Technologies AG
Total Page 7 Pages
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