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IDT08S60C - 2nd Generation thinQ SiC Schottky Diode

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Infineon Technologies AG

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IDT08S60C 2nd Generation thinQ SiC Schottky Diode by Infineon Technologies AG - Datasheet Preview — Datasheet preview – IDT08S60C

Datasheet Details

Part number	IDT08S60C
Manufacturer	Infineon Technologies AG
File Size	257.71 KB
Description	2nd Generation thinQ SiC Schottky Diode
Datasheet	IDT08S60C Datasheet
Additional preview pages of the IDT08S60C datasheet.

Product details

Description

and charts stated herein.

Features

Revolutionary semiconductor material - Silicon Carbide.
Switching behavior benchmark.
No reverse recovery/ No forward recovery.
No temperature influence on the switching behavior.
High surge current capability.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

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Published: Feb 5, 2011 |