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Infineon Technologies Electronic Components Datasheet

IPW60R045CP Datasheet

CoolMOS Power Transistor

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CoolMOS® Power Transistor
Features
• Worldwide best R ds,on in TO247
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Product Summary
V DS @ Tjmax
R DS(on),max
Q g,typ
IPW60R045CP
650 V
0.045
150 nC
PG-TO247-3-1
Type
IPW60R045CP
Package
PG-TO247-3-1
Ordering Code Marking
SP000067149 6R045
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
www.DataSheGeta4tUe.csoomurce voltage
ID
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=11 A, V DD=50 V
I D=11 A, V DD=50 V
V DS=0...480 V
static
AC (f >1 Hz)
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
M3 and M3.5 screws
Value
60
38
230
1950
3
11
50
±20
±30
431
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 2.2
page 1
2008-01-21
Please note the new package dimensions arccording to PCN 2009-134-A


Infineon Technologies Electronic Components Datasheet

IPW60R045CP Datasheet

CoolMOS Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPW60R045CP
Value
44
230
15
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- - 0.29 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
www.DataSheet4U.com
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=3 mA
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=44 A,
T j=25 °C
V GS=10 V, I D=44 A,
T j=150 °C
R G f =1 MHz, open drain
600
2.5
-
-
-
-
-
-
- -V
3 3.5
- 10 µA
50 -
- 100 nA
0.04 0.045
0.11
1.3
-
-
Rev. 2.2
page 2
2008-01-21
Please note the new package dimensions arccording to PCN 2009-134-A


Part Number IPW60R045CP
Description CoolMOS Power Transistor
Maker Infineon Technologies AG
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IPW60R045CP Datasheet PDF






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