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Infineon Technologies Electronic Components Datasheet

IPW90R1K2C3 Datasheet

CoolMOS Power Transistor

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CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
IPW90R1K2C3
Product Summary
V DS @ T J=25°C
R DS(on),max @T J=25°C
Q g,typ
900 V
1.2
28 nC
PG-TO247
Type
IPW90R1K2C3
Package
PG-TO247
Marking
9R1K2C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current 2)
I D,pulse
Avalanche energy, single pulse
Avalanche energy, repetitive t AR 2),3)
Avalanche current, repetitive t AR 2),3)
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
www.DataSheGeta4tUe.csoomurce voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=0.92 A, V DD=50 V
I D=0.92 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T J, T stg
Mounting torque
M3 and M3.5 screws
Value
5.1
3.2
10
68
0.31
0.92
50
±20
±30
83
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
Rev. 1.0
page 1
2008-07-30
Please note the new package dimensions arccording to PCN 2009-134-A


Infineon Technologies Electronic Components Datasheet

IPW90R1K2C3 Datasheet

CoolMOS Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current 2)
Reverse diode dv/dt 4)
Symbol Conditions
IS
I S,pulse
dv/dt
T C=25 °C
IPW90R1K2C3
Value
2.8
11
4
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- - 1.5 K/W
- - 62
- - 260 °C
Electrical characteristics, at T J=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
www.DataSheet4U.com
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=0.31 mA
I DSS
V DS=900 V, V GS=0 V,
T j=25 °C
900
2.5
-
V DS=900 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=2.8 A,
T j=25 °C
-
-
-
V GS=10 V, I D=2.8 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
3
-
10
-
0.94
2.5
1.3
-V
3.5
1 µA
-
100 nA
1.2
-
-
Rev. 1.0
page 2
2008-07-30
Please note the new package dimensions arccording to PCN 2009-134-A


Part Number IPW90R1K2C3
Description CoolMOS Power Transistor
Maker Infineon Technologies AG
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IPW90R1K2C3 Datasheet PDF






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