IPW90R800C3
Features
- Lowest figure-of-merit R ON x Qg
- Extreme dv/dt rated
- High peak current capability
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; Ro HS pliant
- Ultra low gate charge
Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ 900 0.8 42 V Ω n C
PG-TO247
Cool MOS™ 900V is designed for:
- Quasi Resonant Flyback / Forward topologies
- PC Silverbox and consumer applications
- Industrial SMPS
Type IPW90R800C3
Package PG-TO247
Marking 9R800C
Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness
.. Gate source voltage
Value 6.9 4.4 15 157 0.46 1.4
Unit A
I D,pulse E AS E AR I AR dv /dt V GS
T C=25 °C I D=1.4 A, V DD=50 V I D=1.4 A, V DD=50 V m J
A V/ns V
V DS=0...400 V static AC (f>1 Hz)
50...
