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Infineon Technologies Electronic Components Datasheet

MMBT3904 Datasheet

NPN Silicon Switching Transistors

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NPN Silicon Switching Transistors
High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
For SMBT3904S:
Two (galvanic) internal isolated transistors
with good matching in one package
Complementary types: SMBT3906... MMBT3906
SMBT3904S: For orientation in reel
see package information below
Pb-free (RoHS compliant) package
Qualified according AEC Q101
SMBT3904...MMBT3904
Type
SMBT3904/MMBT3904
SMBT3904S
Marking
Pin Configuration
Package
s1A 1=B 2=E 3=C - - - SOT23
s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
TS 71°C, SOT23, SMBT3904
TS 115°C, SOT363, SMBT3904S
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
SMBT3904/MMBT3904
SMBT3904S
Symbol
VCEO
VCBO
VEBO
IC
Ptot
Tj
Tstg
Symbol
RthJS
Value
40
60
6
200
330
250
150
-65 ... 150
Value
240
140
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mV
°C
Unit
K/W
1 2012-08-21
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Infineon Technologies Electronic Components Datasheet

MMBT3904 Datasheet

NPN Silicon Switching Transistors

No Preview Available !

SMBT3904...MMBT3904
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 40
-
-
IC = 1 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO 60
-
-
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
V(BR)EBO 6 - -
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 30 V, IE = 0
DC current gain1)
IC = 100 µA, VCE = 1 V
IC = 1 mA, VCE = 1 V
IC = 10 mA, VCE = 1 V
IC = 50 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
ICBO
hFE
- - 50
40 -
-
70 -
-
100 - 300
60 -
-
30 -
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
Base emitter saturation voltage1)
IC = 10 mA, IB = 1 mA
IC = 50 mA, IB = 5 mA
VCEsat
- - 0.2
- - 0.3
VBEsat
0.65 - 0.85
- - 0.95
1Pulse test: t < 300µs; D < 2%
Unit
V
nA
-
V
2 2012-08-21


Part Number MMBT3904
Description NPN Silicon Switching Transistors
Maker Infineon Technologies AG
Total Page 11 Pages
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