ITCH24025E2
Description
The ITCH24025E2 is a 30-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 2700 MHz ITCH24025E2 - Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 200 mA , Pulse Width =10us, Duty Cycle =12%. Frequency P_1dB ηD P_3dB ηD Gp (dB) (MHz) (dBm) (%) (dBm) (%) 850~900 22 45 64 46 67 1330~1350 18 47 61 47.6 65 1805~1880 19 46 59 47 61 2400~2500 20 44 55 45 57 2620~2690 18.5 45 53 46 57 - Typical Performance (On Innogration fixture with device soldered): VDD = 32 Volts, IDQ = 350 mA, Test signal: WCDMA, 3GPP test model 1; 1 to 64 DPCH; Channel Bandwidth=3.84MHz,PAR =10.5 dB at 0.01 % probability on CCDF.
Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Excellent thermal stability, low HCI drift
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- Pb-free, RoHS-compliant Table
- ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) Class 2 Table
- Test Circuit ponent Layout(2110~2170MHz) Table
- Test Circuit (2010~2170MHz) ponent Designations and Values ponent
