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ITCH24025E2 - RF Power LDMOS FET

Description

The ITCH24025E2 is a 30-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 2700 MHz ITCH24025E2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 200 mA , Pulse Width =10us, Duty

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.

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Datasheet preview – ITCH24025E2

Datasheet Details

Part number ITCH24025E2
Manufacturer Innogration
File Size 0.98 MB
Description RF Power LDMOS FET
Datasheet download datasheet ITCH24025E2 Datasheet
Additional preview pages of the ITCH24025E2 datasheet.

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH24025E2 Preliminary Datasheet V2.0 700MHz-2700MHz, 30W, 28V RF Power LDMOS FETs Description The ITCH24025E2 is a 30-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 2700 MHz ITCH24025E2  Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 200 mA , Pulse Width =10us, Duty Cycle =12%. Frequency P_1dB ηD P_3dB ηD Gp (dB) (MHz) (dBm) (%) (dBm) (%) 850~900 22 45 64 46 67 1330~1350 18 47 61 47.6 65 1805~1880 19 46 59 47 61 2400~2500 20 44 55 45 57 2620~2690 18.
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