ITSN20015P2 Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Designed for broadband operation
- Excellent ruggedness
- Large Positive and Negative Gate/Source Voltage Range for Improved C
- Part: ITSN20015P2
- Description: RF Power LDMOS FET
- Manufacturer: Innogration
- Size: 781.93 KB
