MK1040VP - High Power RF LDMOS FET

Innogration

The MK1040VP by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

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MK1040VP High Power RF LDMOS FET by Innogration - Datasheet Preview — Official preview page of the **MK1040VP** High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number	MK1040VP
Manufacturer	Innogration
File Size	468.41 KB
Description	High Power RF LDMOS FET
Datasheet	MK1040VP-Innogration.pdf
Additional preview pages of the MK1040VP datasheet.

MK1040VP Product details

Description

The MK1040VP is a 400-watt, high performance, internally matched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies 0.5 to 1GHz. Typical performance(on 0.5-1GHz wideband test board with device soldered) Signal：pulse CW, pulse width:100us，duty cycle:10%,Vgs=2.99V,Vds=50V,Idq=120mA Freq(MHz) Pin

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Symbol VDSS VGS VDD Ts.

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Published: Aug 5, 2018 |