MK1040VP Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Overview: MK1040VP LDMOS TRANSISTOR 400W, 50V High Power RF LDMOS FETs.

MK1040VP high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	MK1040VP
Manufacturer	Innogration
File Size	468.41 KB
Description	High Power RF LDMOS FET
Download	MK1040VP Download (PDF)

General Description

The MK1040VP is a 400-watt, high performance, internally matched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies 0.5 to 1GHz.

It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as UHF TV and Aerospace applications.

 Typical performance(on 0.5-1GHz wideband test board with device soldered) Signal：pulse CW, pulse width:100us，duty cycle:10%,Vgs=2.99V,Vds=50V,Idq=120mA Freq(MHz) Pin(dBm) Psat(dBm) Psat(W) IDS(A) Gain(dB) η(%) 500 43.2 57.4 550 2.36 14.2 47% 600 41.2 57.8 603 1.89 16.6 64% 700 41.7 56.5 447 1.58 14.8 57% 800 40.7 56.1 407 1.89 15.4 43% 900 40.8 56.7 468 2.067 15.9 45% 1000 40.5 56 400 1.44 15.5 56%  Typical performance(on 915MHz narrow band test board with device soldered) Vgs=2.97V,Vds=50V, Idq=100mA Frequency 915MHz Signal Pin(dBm) Psat(dBm) Psat(W) IDS(A) Gain(dB) η(%) 10% 100us 39.5 57.3 537 1.8 17.8 60% 20% 100us 40.1 57.4 550 1.89 17.3 58.5% 20% 1ms 40.1 57 500 3.55 16.9 56.5% Document Number: MK1040VP Preliminary Datasheet V1.0 MK1040VP

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Symbol VDSS VGS VDD Ts.

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