MU1014V fet equivalent, high power rf ldmos fet.
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/.
at frequencies HF to 1GHz.
Document Number: MU1014V Preliminary Datasheet V1.0
MU1014V
*Typical Performance (On In.
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