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MU1014V Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Datasheet Details

Part number MU1014V
Manufacturer Innogration
File Size 316.90 KB
Description High Power RF LDMOS FET
Download MU1014V Download (PDF)

General Description

The MU1014V is a 140-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 1GHz.

Document Number: MU1014V Preliminary Datasheet V1.0 MU1014V Typical Performance (On Innogration narrow band fixture with device soldered): VDD = 50 Volts, IDQ = 100 mA, CW.

Frequency Gp (dB) Pout (W) D@Pout (%) 915 MHz 20.5 140 62

Overview

MU1014V LDMOS TRANSISTOR 140W, 50V High Power RF LDMOS FETs.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Suitable.