VTSV02350 Datasheet RF Power N-channel MOSFET

Manufacturer: Innogration

Overview: Innogration (Suzhou) Co., Ltd. 350W, 50V RF Power N-channel MOSFETs.

VTSV02350 rf power n-channel mosfet by Innogration - Datasheet Preview

Datasheet Details

Part number	VTSV02350
Manufacturer	Innogration
File Size	906.02 KB
Description	RF Power N-channel MOSFET
Download	VTSV02350 Download (PDF)

General Description

The VTSV02350 is a 350-watt, gold metallized N-channel MOSFETs, designed for HF/VHF/UHF commercial and industrial applications at frequencies up to 200 MHz.

 Typical Performance (In Demo Fixture): VDD = 50 Volts, IDQ = 500 mA, CW.

Frequency Gp (dB) POUT (W) D (%) 175 MHz 17 350 60 Document Number: VTSV02350 Production Datasheet V1.1 VTSV02350

Key Features

Gold metallization.
Common source configuration, push pull.
Excellent thermal stability, low HCI drift.
Low RDS(on).
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ ) Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol V(BR)DSS VDGR VGS ID PDISS Tstg TC TJ Drain 12 Gate Source 34 5 Figure 1. Pin Connection Value 130.

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