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IL3367D Datasheet High-voltage MOSFET Key Built-in Led Driver

Manufacturer: Integral

Overview: IL3367D, IZ3367 HIGH-VOLTAGE MOSFET КEY BUILT-IN LED – DRIVER (functional analogue of HV9967 f. Suprtex inc.) Microcircuits IL3367D, IZ3367 is a high-voltage LED – driver with built-in MOSFET кey. It is intended for application in a modern energy-saving lighting systems and advertising-informational devices. 08 01 Index D SO-package Main characteristics: IL3367D - plastic SO8-package • Control of LED medium current with accuracy of Figure 1 – Integrated circuit designation 3%; • LED current mean value is set by external resistor; • input voltage on pin SW 8 V ≤ UIN ≤ 60 V; • fixed duration of off-state, set by external resistor; • option of LED light brightness adjustment by low-frequency PWM-signal; • short circuit protection by output • operating temperaturesrange from minus 40 to plus 85 °C; • built-in MOSFET-transistor with operating voltage 60 V and the resistance of open channel 0,8 Оhm (standard value); • option of cascade connection with a high-voltage MOSFET-transistor, operating in depletion mode. Application scope: • DC/DC or AC/DC LED driver ; • LED lighting for LCD-displays; • Multi-purpose direct DC supply • LED panels and boards; • architectural and decorative LED light • charging devices. SW 01 RSENSE 02 GND 03 PWND 04 08 VDD 07 AGND 06 RT 05 TEST Figure 2 – Designation of pins in package of IL3367D imicorcircuit IL3367D, IZ3367_TC_E_v1 11.02.

Datasheet Details

Part number IL3367D
Manufacturer Integral
File Size 134.26 KB
Description HIGH-VOLTAGE MOSFET KEY BUILT-IN LED DRIVER
Datasheet IL3367D-Integral.pdf

General Description

01 16, 17, 18 SW MOSFET key Output, high-voltage voltage regulator input 02 19, 20, 21 RSENSE Check current input 03 22, 23, 24 GND Digital part common pin 04 25 PWMD MOSFET кey PWM switching-on of 05 01 TEST Test pin 06 02 RT RC- generator resistor connection input 07 11 AGND Analogue pin common pin 08 15 VDD Adjustable internally supply voltage pin - 03 -10, 12 - 14 - NA IL3367D, IZ3367_TC_E_v1 11.02.2013 2 IL3367D, IZ3367 Figu

Key Features

  • ight emitting diodes, tOFF.
  • off-time of inbuilt MOSFET-transistor. The porosity of PWM-modulation is limited to 80%, as otherwise it is possible.

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