IDT74FCT827CT Datasheet | Integrated Device

FEATURES : - mon features : - Low input and output leakage ≤1µA (max.) - CMOS power levels - True TTL input and output patibility - VOH = 3.3V (typ.) - VOL = 0.3V (typ.) - Meets or exceeds JEDEC standard 18 specifications - Product available in Radiation Tolerant and Radiation Enhanced versions - Military product pliant to MIL-STD-883, Class B and DESC listed (dual marked) - Available in DIP, SOIC, SSOP, QSOP, CERPACK and LCC packages - Features for FCT827T: - A, B, C and D speed grades - High drive outputs (-15m A IOH, 48m A IOL) - Features for FCT2827T: - A, B and C speed grades - Resistor outputs (-15m A IOH, 12m A IOL .) (-12m A IOH, 12m A IOL Mil.) - Reduced system switching noise DESCRIPTION : The FCT827T is built using an advanced dual metal CMOS technology. The FCT827T/FCT2827T 10-bit bus drivers provide highperformance bus interface buffering for wide data/address paths or buses carrying parity. The 10-bit buffers have NANDed output enables for maximum control flexibility. All of the FCT827T high-performance interface family are designed for high-capacitance load drive capability, while providing low-capacitance bus loading at both inputs and outputs. All inputs have clamp diodes to ground and all outputs are designed for low-capacitance bus loading in high-impedance state. The FCT2827T has balanced output drive with current limiting resistors. This offers low ground bounce, minimal undershoot and controlled output fall times-reducing the need for external series terminating resistors. FCT2827T parts are plug-in replacements for FCT827T parts. FUNCTIONAL BLOCK DIAGRAM Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 OE1 OE2 2573 drw 01 The IDT logo is a registered trademark of Integrated Device Technology, Inc. MILITARY AND MERCIAL TEMPERATURE RANGES ©1995 Integrated Device Technology,...