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IS41C4100 Datasheet 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Manufacturer: ISSI (now Infineon)

Download the IS41C4100 datasheet PDF. This datasheet also includes the IS41LV4100 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS41LV4100_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory.

Both products offer accelerated cycle access EDO Page Mode.

EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 4-bit word.

Overview

IS41C4100 IS41LV4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE.

Key Features

  • TTL compatible inputs and outputs.
  • Refresh Interval: 1024 cycles/16 ms.
  • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • JEDEC standard pinout.
  • Single power supply 5V ± 10% (IS41C4100) 3.3V ± 10% (IS41LV4100).
  • Industrail Temperature Range -40oC to 85oC www. DataSheet4U. com ISSI ®.