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IS41LV16100S - 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The IS41LV16100S by Integrated Silicon Solution is a 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE. Below is the official datasheet preview.

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Official preview page of the IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE datasheet (Integrated Silicon Solution).

Datasheet Details

Part number IS41LV16100S
Manufacturer Integrated Silicon Solution
File Size 569.28 KB
Description 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Datasheet download datasheet IS41LV16100S_IntegratedSiliconSolution.pdf
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IS41LV16100S Product details

Description

The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.These devices offer an accelerated cycle access called EDO Page Mode.EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.The Byte Write control, of upper and lower byte, makes the IS41C16100S ideal for use in 16-, 32-bit wide data bus systems.These

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