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IS41LV16105B Datasheet 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

Manufacturer: ISSI (now Infineon)

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General Description

The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.

Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

The Byte Write control, of upper and lower byte, makes the IS41LV16105B ideal for use in 16-, 32-bit wide data bus systems.

Overview

IS41LV16105B 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE.

Key Features

  • TTL compatible inputs and outputs; tristate I/O.
  • Refresh Interval:.
  • 1,024 cycles/16 ms.
  • Refresh Mode:.
  • RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • JEDEC standard pinout.
  • Single power supply: 3.3V ± 10%.
  • Byte Write and Byte Read operation via two CAS.
  • Extended Temperature Range: -30 C to +85 C.
  • Industrial Temperature Range: -40oC to +85oC.
  • Lead-free available o o www. DataSheet4U. com ISSI APRIL 20.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS41LV16105 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
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IS41LV16100A 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100B 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16256A 256K x 16 (4-MBIT) DYNAMIC RAM
IS41LV16256B 256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV16257A 256K x 16 (4-MBIT) DYNAMIC RAM
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