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Integrated Silicon Solution Electronic Components Datasheet

IS41LV16105B Datasheet

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

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IS41LV16105B
1M x 16 (16-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
ISSI®
www.DataSheet4U.com
APRIL 2005
FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— 1,024 cycles/16 ms
• Refresh Mode:
RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range: -30oC to +85oC
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available
DESCRIPTION
The ISSI IS41LV16105B is 1,048,576 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories. Fast Page
Mode allows 1,024 random accesses within a single row with
access cycle time as short as 20 ns per 16-bit word. The Byte
Write control, of upper and lower byte, makes the IS41LV16105B
ideal for use in 16-, 32-bit wide data bus systems.
These features make the IS41LV16105B ideally suited for high-
bandwidth graphics, digital signal processing, high-performance
computing systems, and peripheral applications.
The IS41LV16105B is packaged in a 42-pin 400-mil SOJ and
400-mil 44- (50-) pin TSOP (Type II).
KEY TIMING PARAMETERS
PIN CONFIGURATIONS
44(50)-Pin TSOP (Type II)
42-Pin SOJ
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
1
2
3
4
5
6
7
8
9
10
11
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
12
13
14
15
16
17
18
19
20
21
22
44 GND
43 I/O15
42 I/O14
41 I/O13
40 I/O12
39 GND
38 I/O11
37 I/O10
36 I/O9
35 I/O8
34 NC
33 NC
32 LCAS
31 UCAS
30 OE
29 A9
28 A8
27 A7
26 A6
25 A5
24 A4
23 GND
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 GND
41 I/O15
40 I/O14
39 I/O13
38 I/O12
37 GND
36 I/O11
35 I/O10
34 I/O9
33 I/O8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 GND
Parameter
-50 -60 Unit
Max. RAS Access Time (tRAC)
50 60 ns
Max. CAS Access Time (tCAC)
13 15 ns
Max. Column Address Access Time (tAA) 25 30 ns
Min. Fast Page Mode Cycle Time (tPC) 20 25 ns
Min. Read/Write Cycle Time (tRC)
84 104 ns
PIN DESCRIPTIONS
A0-A9
I/O0-15
WE
OE
RAS
UCAS
LCAS
VDD
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
1


Integrated Silicon Solution Electronic Components Datasheet

IS41LV16105B Datasheet

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

No Preview Available !

IS41LV16105B
FUNCTIONAL BLOCK DIAGRAM
OE
WE
LCAS
UCAS
CAS
CLOCK
GENERATOR
CAS
ISSI®
www.DataSheet4U.com
WE
CONTROL
LOGICS
WE
OE
CONTROL
LOGIC
RAS
RAS
CLOCK
GENERATOR
REFRESH
COUNTER
DATA I/O BUS
COLUMN DECODERS
SENSE AMPLIFIERS
I/O0-I/O15
A0-A9
ADDRESS
BUFFERS
MEMORY ARRAY
1,048,576 x 16
2 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05


Part Number IS41LV16105B
Description 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
Maker Integrated Silicon Solution
Total Page 20 Pages
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