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IS42VS16160D Datasheet 256-MBIT SYNCHRONOUS DRAM

Manufacturer: ISSI (now Infineon)

Download the IS42VS16160D datasheet PDF. This datasheet also includes the IS42VS83200D variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS42VS83200D-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Overview

IS42VS83200D, IS42VS16160D IS45VS83200D, IS45VS16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION 256-MBIT SYNCHRONOUS DRAM MAY.

Key Features

  • Clock frequency: 133, 125 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single Power supply: 1.8V + 0.1V.
  • LVCMOS interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 8K refresh cycles every 16 ms (A2 grade) or 8K refres.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ISSI Logo IS42VS16160J 256Mb Synchronous DRAM ISSI

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42VS16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100D 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16400L 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS83200D 256-MBIT SYNCHRONOUS DRAM
IS42R32200C1 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
IS42S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160B 256-MBIT SYNCHRONOUS DRAM