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IS42VS16400C1 Datasheet 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

Manufacturer: ISSI (now Infineon)

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General Description

S A0-A11 BA0, BA1 DQ0 to DQ15 CLK CKE CS RAS CAS Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE LDQM UDQM VDD GND VDDQ GNDQ NC Write Enable Lower Bye, Input/Output Mask Upper Bye, Input/Output Mask Power Ground Power Supply for DQ Pin Ground for DQ Pin No Connection Copyright © 2005 Integrated Silicon Solution, Inc.

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ISSI

Overview

IS42VS16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC.

Key Features

  • Clock frequency: 100, 83, 66 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single 1.8V power supply.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Self refresh modes.
  • 4096 refresh cycles every 64 ms.
  • Random column address every clock cycle.
  • P.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42VS16400L 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16100D 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS16160D 256-MBIT SYNCHRONOUS DRAM
IS42VS83200D 256-MBIT SYNCHRONOUS DRAM
IS42R32200C1 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
IS42S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM
IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM
IS42S16160B 256-MBIT SYNCHRONOUS DRAM