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IS43R32160E Datasheet 512Mb DDR SDRAM

Manufacturer: ISSI (now Infineon)

Download the IS43R32160E datasheet PDF. This datasheet also includes the IS43R86400E variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS43R86400E-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

Overview

IS43R86400E IS43/46R16320E, IS43/46R32160E 16Mx32, 32Mx16, 64Mx8 ADVANCED INFORMATION 512Mb DDR SDRAM NOVEMBER.

Key Features

  • VDD and VDDQ: 2.5V ± 0.2V (-5, -6).
  • VDD and VDDQ: 2.5V ± 0.1V (-4).
  • SSTL_2 compatible I/O.
  • Double-data rate architecture; two data transfers per clock cycle.
  • Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver.
  • DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs.
  • Differential clock inputs (CK and CK).
  • DLL aligns DQ and DQS tran.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS43R32160D 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM
IS43R32400A 4Meg x 32 128-MBIT DDR SDRAM
IS43R32400D 128Mb DDR SDRAM
IS43R32400E 128Mb DDR SDRAM
IS43R32800 256Mb DDR Synchronous DRAM
IS43R32800B 256Mb DDR Synchronous DRAM PRELIMINARY INFORMATION
IS43R32800F 256Mb DDR SDRAM
IS43R16160 256Mb Synchronous DRAM
IS43R16160A 16Meg x 16 256-MBIT DDR SDRAM
IS43R16160F 256Mb DDR SDRAM