IS45S16100C1 - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution

IS45S16100C1 Datasheet Preview — Preview of IS45S16100C1 PDF

Datasheet Details

Part number	IS45S16100C1
Manufacturer	Integrated Silicon Solution
File Size	893.07 KB
Description	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Datasheet	IS45S16100C1_IntegratedSiliconSolution.pdf

IS45S16100C1 Product details

Description

ISSI’s 16Mb Synchronous DRAM IS45S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture.All inputs and outputs signals refer to the rising edge of the clock input.PIN CONFIGURATIONS 50-Pin TSOP (Type II) VDD DQ0 DQ1 GNDQ DQ2 DQ3 VDDQ DQ4 DQ5 GNDQ DQ6 DQ7 VDDQ LDQM WE CAS RAS CS A11 A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 4

Features

Clock frequency: 143 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Two banks can be operated simultaneously and independently.
Dual internal bank controlled by A11 (bank select).
Single 3.3V power supply.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
4096 refresh cycles every 64 ms.
Random column.

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Published: Apr 30, 2010 |