IS45S83200C, IS45S16160C Datasheet - Integrated Silicon Solution

IS45S83200C 256 Mb Single Data Rate Synchronous DRAM

- Single 3.3V ±0.3V power supply - Max. Clock frequency : - 6:166MHz<3-3-3>/-7:143MHz<3-3-3>/-75:133MHz<3-3-3> - Fully synchronous operation referenced to clock rising edge - 4-bank operation controlled by BA0,BA1(Bank Address) - /CAS latency- 2/3 (programmable) - Burst length- 1/2/4/8/FP (programm.

IS45S83200C IS45S16160C 256 Mb Single Data Rate Synchronous DRAM www.DataSheet4U.com APRIL 2009 IS45S83200C is organized as 4-bank x 8,388,608-word x 8-bit Synchronous DRAM with LVTTL interface and IS45S16160C is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK. IS45S83200C and IS45S16160C achieve very high speed data rates up to 166MHz, and are suitable for main memories or graphic memories in computer systems. General Descriptio.

IS45S83200C Features

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IS45S16160C_IntegratedSiliconSolution.pdf