IS45VS83200D, IS42VS83200D - 256-MBIT SYNCHRONOUS DRAM

Integrated Silicon Solution

The IS45VS83200D by Integrated Silicon Solution is a 256-MBIT SYNCHRONOUS DRAM. Below is the official datasheet preview.

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IS45VS83200D 256-MBIT SYNCHRONOUS DRAM by Integrated Silicon Solution - Datasheet Preview — Official preview page of the **IS45VS83200D** 256-MBIT SYNCHRONOUS DRAM datasheet (Integrated Silicon Solution).

Datasheet Details

Part number	IS45VS83200D, IS42VS83200D
Manufacturer	Integrated Silicon Solution
File Size	860.56 KB
Description	256-MBIT SYNCHRONOUS DRAM
Datasheet	IS42VS83200D-IntegratedSiliconSolution.pdf
Note	This datasheet PDF includes multiple part numbers: IS45VS83200D, IS42VS83200D. Please refer to the document for exact specifications by model.
Additional preview pages of the IS45VS83200D datasheet.

IS45VS83200D Product details

Description

A0-A12 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ7 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQM Vdd Vss Vddq Vssq NC Write Enable Data Input/Output Mask Power Ground Power Supply for I/O Pin Ground for I/O Pin No Connection Integrated Silicon Solution, Inc. www.issi.com Rev. 00A 04/21/09 3 IS42VS83200D, I

Features

Clock frequency: 133, 125 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single Power supply: 1.8V + 0.1V.
LVCMOS interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Auto Refresh (CBR).
Self Refresh.
8K refresh cycles every 16 ms (A2 grade) or 8K refres.

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Published: Jul 25, 2016 |