logo

IS61C1024 Datasheet, Integrated Silicon Solution

IS61C1024 ram equivalent, 128k x 8 high-speed cmos static ram.

IS61C1024 Avg. rating / M : 1.0 rating-12

datasheet Download

IS61C1024 Datasheet

Features and benefits


* High-speed access time: 12, 15, 20, 25 ns
* Low active power: 600 mW (typical)
* Low standby power: 500 µW (typical) CMOS standby
* Output Enable (OE) a.

Application


* Fully static operation: no clock or refresh required
* TTL compatible inputs and outputs
* Single 5V (±10%.

Description

The ISSI IS61C1024 and IS61C1024L are very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design technique.

Image gallery

IS61C1024 Page 1 IS61C1024 Page 2 IS61C1024 Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts