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IS61C25616AL Datasheet 256K x 16 HIGH-SPEED CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

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General Description

The ISSI IS61C25616AL/AS and IS64C25616AL/AS are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits.

They are fabricated using ISSI's high- performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.

Overview

IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS 256K x 16 HIGH-SPEED CMOS STATIC.

Key Features

  • HIGH SPEED: (IS61/64C25616AL).
  • High-speed access time: 10ns, 12 ns.
  • Low Active Power: 150 mW (typical).
  • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C25616AS).
  • High-speed access time: 25 ns.
  • Low Active Power: 75 mW (typical).
  • Low Standby Power: 1 mW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single 5V ± 10% power supply.
  • Fully static operation: no clock or refresh required.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS61C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C25616 256K x 8 High Speed CMOS STATIC RAM
IS61C256 32K x 8 Low Voltage CMOS STATIC RAM
IS61C256AH 32K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C256AL 32K x 8 High Speed CMOS STATIC RAM
IS61C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS61C3216AL 32K x 16 HIGH-SPEED CMOS STATIC RAM
IS61C512 64K x 8 High Speed CMOS Static RAM
IS61C5128 512K x 8 High Speed CMOS Static RAM