F28F010 Datasheet | Intel

Features g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y ETOXTM Nonvolatile Flash Technology EPROM-patible Process Base High-Volume Manufacturing Experience Y JEDEC-Standard Pinouts 32-Pin Plastic Dip 32-Lead PLCC 32-Lead TSOP (See Packaging Spec Order 231369) Y Extended Temperature Options Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read write random access nonvolatile memory The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology Memory contents can be rewritten in a test socket in a PROM-programmer socket onboard during subassembly test in-system during final test and in-system after-sale The 28F010 increases memory flexibility while contributing to time and cost savings The 28F010 is a 1024 kilobit nonvolatile memory organized as 131 072 bytes of 8 bits Intel’s 28F010 is offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages Pin assignments conform to JEDEC standards for byte-wide EPROMs Extended erase and program cycling capability is designed into Intel’s ETOX (EPROM Tunnel Oxide) process technology Advanced oxide processing an optimized tunneling structure and lower electric field bine to extend reliable cycling beyond that of traditional EEPROMs With the 12 0V VPP supply the 28F010 performs 100 000 erase and program cycles well within the time limits of the Quick Pulse Programming and Quick Erase algorithms Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds low power consumption and immunity to noise Its 65 nanosecond access time provides no-WAIT-state performance for a wide range of microprocessors and microcontrollers Maximum standby current of 100 m A translates into power savings when the device is deselected Finally the highest degree of latch-up protection is achieved through Intel’s unique EPI processing Prevention of latch-up is provided for stresses up to 100 m A on address and data pins...