28F128L30 Datasheet | Intel Corporation

.. 1.8 Volt Intel StrataFlash® Wireless Memory with 3.0-Volt I/O (L30) 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features - High performance Read-While-Write/Erase - 85 ns initial access - 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode - 25 ns asynchronous-page mode - 4-, 8-, 16-, and continuous-word burst mode - Burst suspend - Programmable WAIT configuration - Buffered Enhanced Factory Programming (Buffered EFP): 3.5 µs/byte (Typ) - 1.8 V low-power buffered and non-buffered programming @ 10 µs/byte (Typ) - Architecture - Asymmetrically-blocked architecture - Multiple 8-Mbit partitions: 64Mb and 128Mb devices - Multiple 16-Mbit partitions: 256Mb devices - Four 16-KWord parameter blocks: top or bottom configurations - 64K-Word main blocks - Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE) - Status register for partition and device status - Power - 1.7 V - 2.0 V VCC operation - I/O voltage: 2.2 V - 3.3 V - Standby current: 30 µA (Typ) - 4-Word synchronous read current: 17 mA (Typ) @ 54 MHz - Automatic Power Savings (APS) mode...