GE28F128K18 Datasheet | Intel Corporation

s Performance - 110/115/120 ns Initial Access Speed for 64/128/256 Mbit Densities - 25 ns Asynchronous Page-Mode Reads, 8 Words Wide - 13 ns Synchronous Burst-Mode Reads, 8 or 16 Words Wide - 32-Word Write Buffer - Buffered Enhanced Factory Programming Software - 25 µs (typ.) Program and Erase Suspend Latency Time - Flash Data Integrator (FDI), mon Flash Interface (CFI) patible - Programmable WAIT Signal Polarity Quality and Reliability - Operating Temperature: - 40 °C to +85 °C - 100K Minimum Erase Cycles per Block - 0.18 µm ETOX™ VII Process - - - Architecture - Multi-Level Cell Technology: High Density at Low Cost - Symmetrical 64 K-Word Blocks - 256 Mbit (256 Blocks) - 128 Mbit (128 Blocks) - 64 Mbit (64 Blocks) - Ideal for “CODE + DATA” applications Security - 2-Kbit Protection Register - Unique 64-bit Device Identifier - Absolute Data Protection with VPEN and WP# - Individual and Instantaneous Block Locking, Unlocking and Lock-Down Capability Packaging and Voltage - 64-Ball Intel® Easy BGA Package (128-Mbit is also offered in a lead-free package) - 56-and 79-Ball Intel® VF BGA Package - VCC = 2.70 V to 3.60 V - VCCQ = 1.65 to 1.95 V/2.375 to 3.60...