2N2609 Description
The 30V InterFET 2N2608 and 2N2609 are targeted for data switches and low-level chopper designs. Gate leakages are typically less than 1nA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications.
2N2609 Key Features
- InterFET P0032F Geometry
- Typical Noise: 10 nV/√Hz
- Low Ciss: 3.2pF Typical
- RoHS pliant
- SMT, TH, and Bare Die Package options