2N4341 Description
The -50V InterFET 2N4340 and 2N4341 are very low leakage mid-gain JFETs targeted for sensitive amplifier stages for mid-frequencies designs. Gate leakages are less than 1pA at room temperatures. Proprietary InterFET processes yield exceptionally high radiation tolerance.
2N4341 Key Features
- InterFET N0016H Geometry
- Low gate leakage: < 1pA typical @40V
- Low CISS: 3pF typical
- Typical noise: 3.5 nV/√Hz
- Typical gain: 2mS
- Typical cutoff voltage: -2.5V
- High radiation tolerance
- RoHS, REACH, CMR pliant
- Custom test and binning options available
- SMT, TH, and bare die package options