IFN363 Description
The -40V InterFET IFN363 is a low noise high gain replacement for the Japanese 2SK363 JFET. Gate leakages are typically less than 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications.
IFN363 Key Features
- InterFET N0450H Geometry
- Low Noise: 1.1 nV/√Hz Typical
- High Gain: 60mS Typical
- RoHS pliant
- SMT, TH, and Bare Die Package options