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InterFET

J175 Datasheet Preview

J175 Datasheet

P-Channel JFET

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InterFET
Product
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Technical
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J174-5
J174, J175 P-Channel JFET
Features
InterFET P0099F Geometry
Low Noise: 8 nV/√Hz Typical
Low Rds(on): 85 Ohms Maximum
RoHS Compliant
SMT, TH, and Bare Die Package options.
Applications
Choppers
Commutators
Analog Switches
Description
The 30V InterFET J174 and J175 JFET’s are
targeted for high gain low noise switching,
commutator, and chopper applications.
Source 1
Drain 2
SOT23 Top View
3 Gate
TO-92 Bottom View
Drain 3
Gate 2
Source 1
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS
Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
J174 Min
J175 Min
Unit
30
30
V
-20
-7
mA
5
3
V
Ordering Information Custom Part and Binning Options Available
Part Number
Description
J174; J175
Through-Hole
SMPJ174; SMPJ175
Surface Mount
7“ Tape and Reel: Max 3,000 Pieces
SMPJ174TR; SMPJ175TR
13” Tape and Reel: Max 9,000 Pieces
J174COT; J175COT
Chip Orientated Tray (COT Waffle Pack)
J174CFT; J175CFT
Chip Face-up Tray (CFT Waffle Pack)
Case
TO-92
SOT23
SOT23
COT
CFT
Packaging
Bulk
Bulk
Minimum 1,000 Pieces
Tape and Reel
400/Waffle Pack
400/Waffle Pack
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and
extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and
security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35088.R00




InterFET

J175 Datasheet Preview

J175 Datasheet

P-Channel JFET

No Preview Available !

InterFET
Product
Folder
Technical
Support
Electrical Characteristics
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters
VRGS Reverse Gate Source and Gate Drain Voltage
IFG Continuous Forward Gate Current
PD Continuous Device Power Dissipation
P Power Derating
TJ Operating Junction Temperature
TSTG Storage Temperature
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
V(BR)GSS
IGSS
VGS(OFF)
IDSS
ID(OFF)
Parameters
Gate to Source
Breakdown Voltage
Gate to Source
Reverse Current
Gate to Source
Cutoff Voltage
Drain to Source
Saturation Current
Drain Cutoff Current
Conditions
VDS = 0V, IG = 1μA
VGS = 20V, VDS = 0V
VDS = -15V, ID = -10nA
VGS = 0V, VDS = -15V
(Pulsed)
VDS = -15V, VGS = 10V
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
RDS(ON)
Cgd
Cgs
Cgd + Cgs
td(ON)
Parameters
Drain to Source
ON Resistance
Drain Gate
Capacitance
Input Capacitance
Drain + Source Gate
Capacitance
Turn ON Delay Time
tr
Rise Time
td(OFF)
Turn OFF Delay Time
tf
Fall Time
Conditions
VDS <= 0.1V, VGS = 0V, f = 1kHz
VDS = 0V, VGS = 10V, f = 1MHz
VDS = 0V, VGS = 10V, f = 1MHz
VDS = VGS = 0V, f = 1MHz
J174: VDD = -10V, VGS(OFF) = 12V,
RL = 560 Ω
J175: VDD = -6V, VGS(OFF) = 8V
RL = 1200 Ω
Order
Now
J174-5
Value
30
50
360
3.27
-55 to 125
-65 to 200
Unit
V
mA
mW
mW/°C
°C
°C
J174
J175
Min Max Min Max Unit
30
30
V
1
1
nA
5
10
3
6
V
-20 -125 -7
-70
mA
-1
-1
nA
J174
J175
Min Max Min Max Unit
85
85
Ω
5.5 (typ)
5.5 (typ)
pF
5.5 (typ)
5.5 (typ)
pF
32 (typ)
32 (typ)
pF
2 (typ)
5 (typ)
ns
5 (typ)
10 (typ)
ns
5 (typ)
10 (typ)
ns
10 (typ)
20 (typ)
ns
J174-5
Document Number: IF35088.R00
2 of 4
www.InterFET.com
InterFET Corporation
June, 2019


Part Number J175
Description P-Channel JFET
Maker InterFET
Total Page 3 Pages
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J175 Datasheet PDF

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