J231 - N-Channel JFET

InterFET

Download the J231 datasheet PDF. This datasheet also covers the J230 variant, as both devices belong to the same n-channel jfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The -40V InterFET J230 and J231 are targeted for sensitive amplifier stages for mid-frequencies designs.

Gate leakages are typically less than 10pA at room temperatures.

Key Features

InterFET N0016SH Geometry.
Low Noise: 5 nV/√Hz Typical.
Low Ciss: 4pF Typical.
RoHS Compliant.
SMT, TH, and Bare Die Package options.

📥 Download Datasheet

J231 n-channel jfet by InterFET - Datasheet Preview — Note: The manufacturer provides a single datasheet file (J230-InterFET.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	J231
Manufacturer	InterFET
File Size	528.27 KB
Description	N-Channel JFET
Datasheet	J231 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
J231	N-Channel JFETs	Siliconix
J230	N-Channel JFETs	Siliconix
J232	N-Channel JFETs	Siliconix
J239	2SJ239	Toshiba

Other Datasheets by InterFET

Part Number	Description
J230	N-Channel JFET
J232	N-Channel JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

InterFET Product Folder Technical Support Order Now J230-1 J230, J231 N-Channel JFET Features • InterFET N0016SH Geometry • Low Noise: 5 nV/√Hz Typical • Low Ciss: 4pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Audio Amplifiers • Small Signal Amplifier • Ultrahigh Impedance Pre-Amplifier • Description The -40V InterFET J230 and J231 are targeted for sensitive amplifier stages for mid-frequencies designs. Gate leakages are typically less than 10pA at room temperatures. Source 1 Drain 2 Gate 3 Drain 2 Source 1 SOT23 Top View 3 Gate TO-92 Bottom View Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance J230 Min -40 0.