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InterFET

P0099F Datasheet Preview

P0099F Datasheet

Process Geometry

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InterFET
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P0099F
P0099F Process Geometry
Features
Low Noise: 2.0 nV/√Hz Typical
Typical Input Capacitance: 18pF
Typical Breakdown Voltage: 60V
High Input Impedance
Small Die: 492um X 492um X 203um
Bond Pads: 90um X 90um
Substrate Connected to Gate
Au Back-Side Finish
Applications
General Purpose Amplifier
Switching
Matched Pair Applications
Custom Part Options
Description
The InterFET P0099F Geometry is ideal for
switching and general purpose amplification
applications.
Geometry Top View
P99
G
S-D
S-D
G
Test
Pattern
Standard Parts
2N3993/A, 2N3994/A
2N5114, 2N5115, 2N5116
IFN44
J174, J175, J176, J177
P1086, P1087
2N5019
VCR3P
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
GFS
Forward Transconductance
Min
Typ
Max
Unit
45
60
V
-5
-60
mA
1
8
V
13
mS
Maximum Ratings (@ TA = 25°C, Unless otherwise specified)
Parameters
Min
Typ
Max
Unit
VRGS Reverse Gate to Source or Drain Voltage
45
60
V
IFG Continuous Forward Gate Current
10
mA
TJ Operating Junction Temperature
-55
150
°C
TSTG Storage Temperature
-65
175
°C
Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and
extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and
security requirements is the responsibility of the Buyer. These resources are subject to change without notice.
IF35523.R01




InterFET

P0099F Datasheet Preview

P0099F Datasheet

Process Geometry

No Preview Available !

InterFET
Product
Folder
Technical
Support
Order
Now
Electrical Characteristics
Static Characteristics (@ TA = 25°C, Unless otherwise specified)
Parameters
Conditions
Min
Typ
BVGSS
Gate to Source
Breakdown Voltage
IG = -1μA, VDS = 0V
45
60
IGSS
Gate to Source
Reverse Current
VGS = -10V, VDS = 0V
500
VGS(OFF)
Gate to Source
Cutoff Voltage
VDS = 10V, ID = 1nA
1
IDSS
Drain to Source
Saturation Current
VDS = 10V, VGS = 0V
5
Dynamic Characteristics (@ TA = 25°C, Unless otherwise specified)
Parameters
Conditions
Min
Typ
GFS
Forward
Transconductance
VDS = 10V, VGS = 0 V,
f = 1kHz
13
Ciss Input Capacitance
VDS = 10V, VGS = 0 V,
f = 1MHz
18
Crss
Reverse Transfer
Capacitance
VDS = 0V, VGS = -10 V,
f = 1MHz
4.5
en Noise Voltage
VDS = 10V, ID = 5mA
f = 1kHz
2.0
P0099F
Max
Unit
V
1000
pA
8
V
60
mA
Max
Unit
mS
pF
pF
nV/Hz
P0099F
Document Number: IF35523.R01
2 of 5
www.InterFET.com
InterFET Corporation
November, 2019


Part Number P0099F
Description Process Geometry
Maker InterFET
Total Page 3 Pages
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