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P0099F Datasheet Process Geometry

Manufacturer: InterFET

Datasheet Details

Part number P0099F
Manufacturer InterFET
File Size 864.58 KB
Description Process Geometry
Datasheet download datasheet P0099F Datasheet

General Description

The InterFET P0099F Geometry is ideal for switching and general purpose amplification applications.

Geometry Top View P99 G S-D S-D G Test Pattern Standard Parts • 2N3993/A, 2N3994/A • 2N5114, 2N5115, 2N5116 • IFN44 • J174, J175, J176, J177 • P1086, P1087 • 2N5019 • VCR3P Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit 45 60 V -5 -60 mA 1 8 V 13 mS Maximum Ratings (@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage 45 60 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions.

Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer.

Overview

InterFET Product Folder Technical Support Order Now P0099F P0099F Process.

Key Features

  • Low Noise: 2.0 nV/√Hz Typical.
  • Typical Input Capacitance: 18pF.
  • Typical Breakdown Voltage: 60V.
  • High Input Impedance.
  • Small Die: 492um X 492um X 203um.
  • Bond Pads: 90um X 90um.
  • Substrate Connected to Gate.
  • Au Back-Side Finish.