* InterFET N0001H Geometry
* Low Leakage: 0.5pA Typical
* Low Capacitance: 0.8pF Typical
* RoHS Compliant
* SMT, TH, and Bare Die Package options.
App.
* High Impedance Protection Circuits
* Low Power Battery Circuitry
* High Impedance Diode Switching
Descript.
The -45V InterFET PAD1 and PAD2 are targeted for low power and high impedance applications. Leakages are typically 0.5pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. For SOT23 functionality pi.
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