logo
HOME
MOSFET
Toshiba
Renesas
Sanyo Denki
RF Transistor

PAD1 InterFET

PAD1 PicoAmp Diode

PAD1 Avg. rating / M : star-16

datasheet Download

PAD1 Datasheet

Features and benefits


• InterFET N0001H Geometry
• Low Leakage: 0.5pA Typical
• Low Capacitance: 0.8pF Typical
• RoHS Compliant
• SMT, TH, and Bare Die Package options. App.

Application


• High Impedance Protection Circuits
• Low Power Battery Circuitry
• High Impedance Diode Switching Descript.

Image gallery

PAD1 PAD1 PAD1

TAGS
PAD1
PicoAmp
Diode
PAD10
PAD100
PAD2
InterFET
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy