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J232 Datasheet

N-Channel Silicon Junction Field-Effect Transistor

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01/99
¥ Audio Amplifier
B-59
J232
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Dynamic Electrical Characteristics
V(BR)GSS
IGSS
IG
VGS(OFF)
IDSS
Common Source Forward Transconductance gfs
Common Source Output Conductance gos
Common Source Input Capacitance
Ciss
Common Source Reverse Transfer
Capacitance
Crss
Equivalent Short Circuit
Input Noise Voltage
N
Min
– 40
–3
5
2500
J232 Process NJ16
Typ Max Unit
Test Conditions
V IG = – 1 µA, VDS = ØV
– 250 pA VGS = – 30V, VDS = ØV
– 2 pA VDS = 20V, ID = ØV
– 6 V VDS = 20V, ID = 1 µA
10 mA VDS = 20V, VGS = Ø V
5000 µS VDS = 20V, VGS = Ø V
5 µS VDS = 20V, VGS = Ø V
4 pF VDS = 20V, VGS = Ø V
1 pF VDS = 20V, VGS = Ø V
20 30 nV/Hz VDS = 10V, VGS = Ø V
6 nV/Hz VDS = 10V, VGS = Ø V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 10 Hz
f = 1 kHz
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
www.interfet.com
Surface Mount
SMPJ232
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375


Part Number J232
Description N-Channel Silicon Junction Field-Effect Transistor
Maker InterFET Corporation
Total Page 1 Pages
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