2N7522
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Preliminary Data Sheet
Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel
200Volt, 0.505 Ω , RAD Hard MOSFET Package: SMD-0.5 Product Summary
Hex Size 3 Technology RAD Hard BV DSS -200V RDS (on) 0.505 Ω ID -8.0A
2N7522 R5
Absolute Maximum Ratings
Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C PD @ TC = 25°C VGS EAS IAR EAR TJ Continuous Drain Current Continuous Drain Current Power Dissipation Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current . Repetitive Avalanche Energy Operating Junction Range Value -8.0 -5.0 75 ±20 75 -8.0 7.5 -55 to 150 Units A A W V m J A m J °C
Data Shee
Pre-Irradiation Electrical Characteristics @ T J = 25° C (Unless Otherwise Specified)
Parameter BVDSS RDS(on) VGS (th) IDSS IDSS IGSS IGSS Qg Drain-to-Source Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Gate-to-Source...
