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International Rectifier Electronic Components Datasheet

2N7599T3 Datasheet

RADIATION HARDENED POWER MOSFET

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PD-95837B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
2N7599T3
IRHY67C30CM
600V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY67C30CM 100K Rads (Si)
IRHY63C30CM 300K Rads (Si)
RDS(on)
3.0
3.0
ID
3.4A
3.4A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
TO-257AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
3.4
2.1
13.6
75
0.6
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
±20
97
3.4
7.5
8.1
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063 in. /1.6 mm from case for 10s)
°C
Weight
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
08/05/15


International Rectifier Electronic Components Datasheet

2N7599T3 Datasheet

RADIATION HARDENED POWER MOSFET

No Preview Available !

IRHY67C30CM, 2N7599T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
600
2.0
3.7
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
Typ Max Units
——
V
0.51 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 3.0
VGS = 12V, ID = 2.1A „
— 4.0
——
— 10
— 25
— 100
— -100
— 35
— 12
— 15
— 18
— 12
— 36
— 14
6.8 —
1267
79
1.1
1.1
V VDS = VGS, ID = 1.0mA
S VDS = 15V, IDS = 2.1A „
µA
VDS = 480V ,VGS = 0V
VDS = 480V,
VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
VGS =12V, ID = 3.4A
nC VDS = 300V
VDD = 300V, ID = 3.4A
ns VGS =12V, RG = 7.5
nH Measured from Drain lead (6mm /
0.25in. from package) to Source
lead (6mm /0.25in. from package)
VGS = 0V, VDS = 25V
pF f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 3.4 A
ISM Pulse Source Current (Body Diode) 
— — 13.6
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 741 ns
QRR Reverse Recovery Charge
— — 2.1 nC
Tj = 25°C, IS = 3.4A, VGS = 0V „
Tj = 25°C, IF = 3.4A, di/dt 100A/µs
VDD 50V „
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
Test Conditions
1.67
80
°C/W
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com


Part Number 2N7599T3
Description RADIATION HARDENED POWER MOSFET
Maker International Rectifier
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